Datasheet Summary
20V- N-Channel Enhancement-Mode MOSFET
General Description
- ID=3.2.A
- RDS(on)=48mΩ(Typ.)@VGS=4.5V
- RDS(on)=65mΩ(Typ.)@VGS=2.5V
- RDS(on)=90mΩ(Typ.)@VGS=1.8V
G. Gate S. Source D. Drain
- Low Gate charge
- Fast switching speed
- High density cell design for ultra low On-Resistance
- Application:
-Switching applications
-Power management
- Lead free and green devices available
- Package: SOT23
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