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CST9926 - N-Channel Enhancement Mode Power MOSFET

Description

The CST9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =20V,ID =6A Schematic diagram RDS(ON) < 32mΩ @ VGS=4.5V RDS(ON) < 42mΩ @ VGS=2.5V.
  • High density cell design for ultra low Rdson k.
  • Fully characterized avalanche voltage and current.

📥 Download Datasheet

Datasheet Details

Part number CST9926
Manufacturer ChipSourceTek
File Size 447.57 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet CST9926 Datasheet

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The CST9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. CST9926 General Features ● VDS =20V,ID =6A Schematic diagram RDS(ON) < 32mΩ @ VGS=4.5V RDS(ON) < 42mΩ @ VGS=2.
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