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MX2N7002 - N-Channel Enhancement Mode Power MOSFET

Features

  • VDS =60V，ID = 0.3A VGS= 5V RDS(ON)(Typ. )=1.3Ω VGS=10 V RDS(ON)(Typ. )=1Ω ESD Rating:HBM 2300V MX2N7002 1.High power and current handing capability Schematic diagram 2.Lead free product is acquired 3.Surface mount package k.

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Datasheet Details

Part number MX2N7002
Manufacturer ChipSourceTek
File Size 1.44 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MX2N7002 Datasheet

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Deneral Features VDS =60V，ID = 0.3A VGS= 5V RDS(ON)(Typ.)=1.3Ω VGS=10 V RDS(ON)(Typ.)=1Ω ESD Rating:HBM 2300V MX2N7002 1.High power and current handing capability Schematic diagram 2.Lead free product is acquired 3.Surface mount package k Application 1.Direct logic-level interface: TTL/CMOS e 2.Drivers: relays, solenoids, lamps, hammers,display, T memories, transistors, etc. 3.Battery operated systems rce 4.Solid-state relays D 7002 G S Marking and pin assignment SOT-23 (TOP VIEW) ipSou Absolute Maximum Ratings (TA=25℃ unless otherwise noted) h Drain-Source Voltage CGate-Source Voltage Parameter Symbol VDS VGS Limit 60 ±20 Unit V V TA =25℃ 0.3 Continuous Drain Current (TJ =150℃) ID A TA =100℃ 0.
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