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MX2300 - N-Channel Enhancement Mode Power MOSFET

General Description

The MX2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

in PWM applications.

Key Features

  • Schematic diagram.
  • VDS =20V，ID =4.5A.
  • RDS(ON)(Typ. )27mΩ @ Vgs=4.5V.
  • RDS(ON)(Typ. )33mΩ @ Vgs=2.5V.
  • High power and current handing capability k.
  • Lead free product is acquired.
  • Surface mount package e.

📥 Download Datasheet

Datasheet Details

Part number MX2300
Manufacturer ChipSourceTek
File Size 1.16 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MX2300 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MX2300 N-Channel Enhancement Mode Power MOSFET Description The MX2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. s G D General Features Schematic diagram  VDS =20V，ID =4.5A  RDS(ON)(Typ.)27mΩ @ Vgs=4.5V  RDS(ON)(Typ.)33mΩ @ Vgs=2.