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MX2305 - P-Channel Power MOSFET

Description

The MX2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protected.

Features

  • VDS =-20V,ID =-4A RDS(ON)(Typ. ) < 38mΩ @ VGS=-4.5V Schematic diagram RDS(ON) (Typ. )< 54mΩ @ VGS=-2.5V ESD Rating: 2500V HBM High Power and current handing capability Lead free product is acquired k Surface mount package e.

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Datasheet preview – MX2305

Datasheet Details

Part number MX2305
Manufacturer ChipSourceTek
File Size 0.99 MB
Description P-Channel Power MOSFET
Datasheet download datasheet MX2305 Datasheet
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Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET Description The MX2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protected. MX2305 General Features VDS =-20V,ID =-4A RDS(ON)(Typ.) < 38mΩ @ VGS=-4.5V Schematic diagram RDS(ON) (Typ.)< 54mΩ @ VGS=-2.
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