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MX2301 - P-Channel Power MOSFET

General Description

The MX2301 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS=-20V, ID=-3A RDS(ON)(Typ. )=110mΩ @ VGS=-2.5V RDS(ON)(Typ. )=85mΩ @ VGS=-4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number MX2301
Manufacturer ChipSourceTek
File Size 670.39 KB
Description P-Channel Power MOSFET
Datasheet download datasheet MX2301 Datasheet

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Other Datasheets by ChipSourceTek

Part Number Description
MX2301A P-Channel Power MOSFET
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MX2305 P-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Power MOSFET MX2301 DESCRIPTION The MX2301 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES  VDS=-20V, ID=-3A RDS(ON)(Typ.)=110mΩ @ VGS=-2.5V RDS(ON)(Typ.)=85mΩ @ VGS=-4.