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MX2301A - P-Channel Power MOSFET

General Description

The MX2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS =-20V,ID =-3A @VGS=-2.5V RDS(ON)(Typ. )=110mΩ @VGS=-4.5V RDS(ON)(Typ. )=85mΩ k High power and current handing capability Lead free product is acquired e Surface mount package T.

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Datasheet Details

Part number MX2301A
Manufacturer ChipSourceTek
File Size 1.29 MB
Description P-Channel Power MOSFET
Datasheet download datasheet MX2301A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MX2301A P-Channel Enhancement Mode Power MOSFET Description The MX2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. s G D General Features VDS =-20V,ID =-3A @VGS=-2.5V RDS(ON)(Typ.)=110mΩ @VGS=-4.5V RDS(ON)(Typ.)=85mΩ k High power and current handing capability Lead free product is acquired e Surface mount package T Application PWM applications e Load switch Schematic diagram 3 a.NC3A 1 2 rcMarking and pin assignment SOT-23 (TOP VIEW) u Ordering Information o Part Number S MX2301A Marking a.