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MX4953 - Dual P-Channel Enhancement Mode Power MOSFET

General Description

The MX4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -4.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -5.3A RDS(ON) (Typ. )44mΩ @ VGS=-10V k RDS(ON) (Typ. )68mΩ @ VGS=-4.5V High Power and current handing capability e Lead free product is acquired T Surface mount package e.

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Datasheet Details

Part number MX4953
Manufacturer ChipSourceTek
File Size 1.41 MB
Description Dual P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MX4953 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MX4953 Dual P-Channel Enhancement Mode Power MOSFET Description The MX4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -4.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -30V,ID = -5.3A RDS(ON) (Typ.)44mΩ @ VGS=-10V k RDS(ON) (Typ.)68mΩ @ VGS=-4.5V High Power and current handing capability e Lead free product is acquired T Surface mount package e Application rc PWM applications Load switch u Power management So SOP-8 top view ip Absolute Maximum Ratings (TA=25℃unless otherwise noted) h Drain-Source Voltage Parameter Symbol VDS Limit Unit -30 V Gate-Source Voltage VGS ±20 V C Drain Current-Continuous ID -5.