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MX8205AH - N-Channel Enhancement Mode Power MOSFET

Key Features

  • VDS = 20V,ID =6A RDS(ON) (Typ. ) =22mΩ @ VGS=4.5V RDS(ON)(Typ. ) =27mΩ @ VGS=2.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package k Applicatio e Battery protection Load switch ceT Power management 88220055AA Marking and pin assignment Sour Table 1. Absolute Maximum Ratings (TA=25℃) ip Drain-Source Voltage Ch Gate-Source Voltage Parameter Symbol VDS VGS Limit 20 ±12 Unit V V Drain Current-Continuous ID 6 A Drai.

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Datasheet Details

Part number MX8205AH
Manufacturer ChipSourceTek
File Size 690.82 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MX8205AH Datasheet

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Other Datasheets by ChipSourceTek

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MX8205AH N-Channel Enhancement Mode Power MOSFET The MX8205AH uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications. General Features  VDS = 20V,ID =6A RDS(ON) (Typ.) =22mΩ @ VGS=4.5V RDS(ON)(Typ.) =27mΩ @ VGS=2.5V  High Power and current handing capability  Lead free product is acquired  Surface Mount Package k Applicatio e Battery protection Load switch ceT Power management 88220055AA Marking and pin assignment Sour Table 1.