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MX8205L - N-Channel Enhancement Mode Power MOSFET

Download the MX8205L datasheet PDF. This datasheet also covers the MX8205L-ChipSourceTek variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • VDS = 20V,ID =6A RDS(ON) (Typ. ) =16mΩ @ VGS=4.5V RDS(ON) (Typ. ) =17mΩ @ VGS=3.8V RDS(ON)(Typ. ) =21mΩ @ VGS=2.5V.
  • High Power and current handing capability.
  • Lead free product is acquired k.
  • Surface Mount Package e Applicatio T Battery protection Load switch e Power management 8205 8205A Marking and pin assignment pSourcSOT-23-6 (TOP VIEW) Chi AsolAbsolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V G.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MX8205L-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MX8205L
Manufacturer ChipSourceTek
File Size 782.34 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MX8205L Datasheet

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Other Datasheets by ChipSourceTek

Part Number Description
MX8205 Dual N-Channel Power MOSFET
MX8205A Dual N-Channel Enhancement Mode Power MOSFET
MX8205AH N-Channel Enhancement Mode Power MOSFET
MX8806 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MX8205L N-Channel Enhancement Mode Power MOSFET The MX8205L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications. General Features  VDS = 20V,ID =6A RDS(ON) (Typ.) =16mΩ @ VGS=4.5V RDS(ON) (Typ.) =17mΩ @ VGS=3.8V RDS(ON)(Typ.) =21mΩ @ VGS=2.