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MX8806 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • VDS = 16V,ID =7A RDS(ON) (Typ. ) 11mΩ @ VGS=4.5V RDS(ON) (Typ. ) 12mΩ @ VGS=3.8V RDS(ON)(Typ. ) 14mΩ @ VGS=2.5V.
  • High Power and current handing capability.
  • Lead free product is acquired k.
  • Surface Mount Package e Applicatio.
  • PWM.

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Datasheet Details

Part number MX8806
Manufacturer ChipSourceTek
File Size 720.52 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MX8806 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MX8806 N-Channel Enhancement Mode Power MOSFET The MX8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features  VDS = 16V,ID =7A RDS(ON) (Typ.) 11mΩ @ VGS=4.5V RDS(ON) (Typ.) 12mΩ @ VGS=3.8V RDS(ON)(Typ.) 14mΩ @ VGS=2.