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MXN3380 Datasheet

Dual N-channel Enhancement Mode Power MOSFET

Manufacturer: ChipSourceTek

This datasheet includes multiple variants, all published together in a single manufacturer document.

MXN3380 Overview

The MX3380 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected General.

MXN3380 Key Features

  • VDS =20V,ID =17A
  • @VGS=4.5V RDS(ON)(Typ.)=5.5mΩ
  • @VGS=3.8V RDS(ON)(Typ.)=6mΩ
  • @VGS=2.5V RDS(ON)(Typ.)=8mΩ

MXN3380 Distributor