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MXN3380 - Dual N-Channel Enhancement Mode Power MOSFET

Download the MXN3380 datasheet PDF. This datasheet also covers the MXN3380-ChipSourceTek variant, as both devices belong to the same dual n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The MX3380 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • Schematic diagram.
  • VDS =20V,ID =17A.
  • @VGS=4.5V RDS(ON)(Typ. )=5.5mΩ xxxxx.
  • @VGS=3.8V RDS(ON)(Typ. )=6mΩ.
  • @VGS=2.5V RDS(ON)(Typ. )=8mΩ ESD Rating: 2000V HBM k High Power and current handing capability e Lead free product is acquired Surface Mount Package Marking and pin Assignment eT.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MXN3380-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MXN3380
Manufacturer ChipSourceTek
File Size 849.65 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXN3380 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MXN3380 Dual N-Channel Enhancement Mode Power MOSFET Description The MX3380 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected General Features Schematic diagram  VDS =20V,ID =17A  @VGS=4.5V RDS(ON)(Typ.)=5.5mΩ xxxxx  @VGS=3.8V RDS(ON)(Typ.)=6mΩ  @VGS=2.5V RDS(ON)(Typ.