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MXN3380 - Dual N-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the MXN3380, a member of the MXN3380-ChipSourceTek Dual N-Channel Enhancement Mode Power MOSFET family.

Datasheet Summary

Description

The MX3380 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • Schematic diagram.
  • VDS =20V，ID =17A.
  • @VGS=4.5V RDS(ON)(Typ. )=5.5mΩ xxxxx.
  • @VGS=3.8V RDS(ON)(Typ. )=6mΩ.
  • @VGS=2.5V RDS(ON)(Typ. )=8mΩ ESD Rating: 2000V HBM k High Power and current handing capability e Lead free product is acquired Surface Mount Package Marking and pin Assignment eT.

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Datasheet preview – MXN3380

Datasheet Details

Part number MXN3380
Manufacturer ChipSourceTek
File Size 849.65 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXN3380 Datasheet
Additional preview pages of the MXN3380 datasheet.

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Full PDF Text Transcription

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MXN3380 Dual N-Channel Enhancement Mode Power MOSFET Description The MX3380 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected General Features Schematic diagram  VDS =20V，ID =17A  @VGS=4.5V RDS(ON)(Typ.)=5.5mΩ xxxxx  @VGS=3.8V RDS(ON)(Typ.)=6mΩ  @VGS=2.5V RDS(ON)(Typ.
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