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MXN3388L - Dual N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The MXN3388L uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

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Datasheet preview – MXN3388L

Datasheet Details

Part number MXN3388L
Manufacturer ChipSourceTek
File Size 773.98 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXN3388L Datasheet
Additional preview pages of the MXN3388L datasheet.

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Dual N-Channel Enhancement Mode Power MOSFET MXN3388L DESCRIPTION The MXN3388L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. GENERAL FEATURES APPLICATION  VDS=20V, ID=8A RDS(ON)(Typ.)=15.5mΩ @ VGS=2.5V RDS(ON)(Typ.)=10.6mΩ @ VGS=3.8V RDS(ON)(Typ.)=10mΩ @ VGS=4.
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