Datasheet4U Logo Datasheet4U.com

MXN3382 - Dual N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The MX3382 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • Schematic diagram.
  • VDS =18V，ID =22A.
  • @VGS=4.5V RDS(ON)(Typ. )=4.5mΩ xxxxx.
  • @VGS=3.8V RDS(ON)(Typ. )=4.7mΩ.
  • @VGS=2.5V RDS(ON)(Typ. )=6mΩ ESD Rating: 2000V HBM k High Power and current handing capability Lead free product is acquired e Surface Mount Package Marking and pin Assignment eT.

📥 Download Datasheet

Datasheet preview – MXN3382

Datasheet Details

Part number MXN3382
Manufacturer ChipSourceTek
File Size 647.47 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXN3382 Datasheet
Additional preview pages of the MXN3382 datasheet.

📁 Similar Datasheet

Other Datasheets by ChipSourceTek
  • MXN3380 - Dual N-Channel Enhancement Mode Power MOSFET
  • MXN3388L - Dual N-Channel Enhancement Mode Power MOSFET
  • MXN3342 - N-Channel Enhancement Mode Power MOSFET
  • MXN3345 - P-Channel Enhancement Mode Power MOSFET
  • MXN3347 - P-Channel Power MOSFET
  • MXN3016M - N-Channel Power MOSFET
  • MXN3050G - N-Channel Enhancement Mode Power MOSFET
  • MXN3060 - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
MXN3382 Dual N-Channel Enhancement Mode Power MOSFET Description The MX3382 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected General Features Schematic diagram  VDS =18V，ID =22A  @VGS=4.5V RDS(ON)(Typ.)=4.5mΩ xxxxx  @VGS=3.8V RDS(ON)(Typ.)=4.7mΩ  @VGS=2.5V RDS(ON)(Typ.
Published: |