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MXN3382 - Dual N-Channel Enhancement Mode Power MOSFET

General Description

The MX3382 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • Schematic diagram.
  • VDS =18V，ID =22A.
  • @VGS=4.5V RDS(ON)(Typ. )=4.5mΩ xxxxx.
  • @VGS=3.8V RDS(ON)(Typ. )=4.7mΩ.
  • @VGS=2.5V RDS(ON)(Typ. )=6mΩ ESD Rating: 2000V HBM k High Power and current handing capability Lead free product is acquired e Surface Mount Package Marking and pin Assignment eT.

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Datasheet Details

Part number MXN3382
Manufacturer ChipSourceTek
File Size 647.47 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXN3382 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MXN3382 Dual N-Channel Enhancement Mode Power MOSFET Description The MX3382 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected General Features Schematic diagram  VDS =18V，ID =22A  @VGS=4.5V RDS(ON)(Typ.)=4.5mΩ xxxxx  @VGS=3.8V RDS(ON)(Typ.)=4.7mΩ  @VGS=2.5V RDS(ON)(Typ.