Datasheet Summary
P-Channel Enhancement Mode Power MOSFET
Description
The PE2301A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = -20V, ID = -3A
RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V
Schematic diagram
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- PWM applications
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- Load switch k
- Power management
Marking and pin assignment
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