Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
Description
The PE2306A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltage. This device is suitable for use as a battery protection
G or in other switching application.
<
General Features
- VDS 20V,ID =1.6A
Schematic diagram
RDS(ON) <85mΩ @ VGS=4.5V
RDS(ON) <110mΩ @ VGS=2.5V
- Surface Mount Package
Application
技
- Load/ power switching cell phones pagers k
- Power supply converter circuits
2306A
Marking and pin assignment
科 Te SOT-23 top view
源特 rce...