Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
Description
The PE2302A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = 20V, ID =3A
RDS(ON) < 45mΩ @VGS=4.5V RDS(ON) < 55mΩ @VGS=2.5V
Schematic diagram
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- PWM applications
技
- Load switch
Marking and pin assignment
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