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PE3024KC - N and P Channel Enhancement Mode Power MOSFET

General Description

The PE3024KC uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • N-Channel.
  • VDS = 30V, ID = 18A RDS(ON) < 14mΩ @ VGS=10V RDS(ON) < 20mΩ @ VGS=4.5V Schematic diagram.
  • P-Channel.
  • VDS = -30V, ID = -14A RDS(ON) < 29mΩ @ VGS=-10V RDS(ON) < 43mΩ @ VGS=-4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired k.
  • Surface Mount Package e.

📥 Download Datasheet

Datasheet Details

Part number PE3024KC
Manufacturer ChipSourceTek
File Size 1.57 MB
Description N and P Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE3024KC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N and P Channel Enhancement Mode Power MOSFET Description The PE3024KC uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE3024KC General Features ● N-Channel ● VDS = 30V, ID = 18A RDS(ON) < 14mΩ @ VGS=10V RDS(ON) < 20mΩ @ VGS=4.5V Schematic diagram ● P-Channel ● VDS = -30V, ID = -14A RDS(ON) < 29mΩ @ VGS=-10V RDS(ON) < 43mΩ @ VGS=-4.