PE30P13DS - P-Channel Enhancement Mode Power MOSFET

ChipSourceTek

Download the PE30P13DS datasheet PDF. This datasheet also covers the PE30P13DS-ChipSourceTek variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PE30P13DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS = -30V, ID = -9A RDS(ON) < 17mΩ @ VGS=-10V RDS(ON) < 25mΩ @ VGS=-4.5V Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

📥 Download Datasheet

PE30P13DS p-channel enhancement mode power mosfet by ChipSourceTek - Datasheet Preview — Note: The manufacturer provides a single datasheet file (PE30P13DS-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	PE30P13DS
Manufacturer	ChipSourceTek
File Size	0.98 MB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	PE30P13DS Datasheet

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Other Datasheets by ChipSourceTek

Part Number	Description
PE30P11DS	P-Channel Enhancement Mode Power MOSFET
PE30P17S	P-Channel Enhancement Mode Power MOSFET
PE30P65K	P-Channel Enhancement Mode Power MOSFET
PE3010	N-Channel Enhancement Mode Power MOSFET
PE30100K	N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

P-Channel Enhancement Mode Power MOSFET Description The PE30P13DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE30P13DS General Features ● VDS = -30V, ID = -9A RDS(ON) < 17mΩ @ VGS=-10V RDS(ON) < 25mΩ @ VGS=-4.