Part PE30P12S
Description P-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer semi one
Size 722.61 KB
semi one

PE30P12S Overview

Description

The PE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -12A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 16mΩ @ VGS=-10V - High Power and current handing capability
  • Lead free product is acquired
  • Surface mount package