PE30P17S - P-Channel Enhancement Mode Power MOSFET

ChipSourceTek

General Description

The PE30P17S uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS = -30V, ID = -17A RDS(ON) < 6.5mΩ @ VGS=-10V RDS(ON) < 10mΩ @ VGS=-4.5V Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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PE30P17S p-channel enhancement mode power mosfet by ChipSourceTek - Datasheet Preview

Datasheet Details

Part number	PE30P17S
Manufacturer	ChipSourceTek
File Size	1.04 MB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	PE30P17S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Power MOSFET Description The PE30P17S uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE30P17S General Features ● VDS = -30V, ID = -17A RDS(ON) < 6.5mΩ @ VGS=-10V RDS(ON) < 10mΩ @ VGS=-4.