• Part: PE8322CG
  • Description: N and P Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: ChipSourceTek
  • Size: 1.58 MB
PE8322CG Datasheet (PDF) Download
ChipSourceTek
PE8322CG

Description

The PE8322CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

Key Features

  • VDS = 30V, ID = 22A RDS(ON) < 14mΩ @ VGS=10V RDS(ON) < 20mΩ @ VGS=4.5V - P-Channel
  • High Power and current handing capability
  • Lead free product is acquired k
  • Surface Mount Package 科 e Application 特 T
  • C Maximum Power Dissipation (TC=25℃) Symbol VDS VGS ID IDM PD N-Channel 30 ±20 22 66 20 P-Channel
  • 30 ±20 -20 -60 20 Unit V V A A W Avalanche Current IAS 27
  • 25 A Avalanche Energy (L=0.1mH) EAS 36 31 mJ Operating Junction and Storage Temperature Range TJ,TSTG
  • 17.5 20 mΩ Forward Transconductance Dynamic Characteristics (Note
  • gFS VDS=10V,ID=8A 10 - - S Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note