Datasheet4U.com

PE8322CG Datasheet PDF

ChipSourceTek PE8322CG

The PE8322CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
Part No. PE8322CG
Datasheet PE8322CG Download
Manufacturer
ChipSourceTek
Description N and P Channel Enhancement Mode Power MOSFET
Buy Stock & Price
PE8322CG datasheet page 1 preview

DESCRIPTION

It can be used in a wide variety of applications.

GENERAL FEATURES

● N-Channel
● VDS = 30V, ID = 22A RDS(ON) < 14mΩ @ VGS=10V RDS(ON) < 20mΩ @ VGS=4.5V Schematic diagram
● P-Channel
● VDS = -30V, ID = -20A RDS(ON) < 30mΩ @ VGS=-10V RDS(ON) < 46mΩ @ VGS=-4.5V 技
● High Power and current handing capability
● Lead free product is acquired k
● Surface Mount Package 科 e Application 特 T
● DCmotor
● PWM applications Marking and pin assignment 源 rceDFN5x6-8L 矽 ou

ABSOLUTE MAXIMUM RATINGS

(TC=25℃ unless otherwise noted) S Parameter Drain-Source Voltage ip Gate-Source Voltage Drain Current-Continuous (TC=25℃) h Pulsed Drain Current (Note 1) C Maximum Power Dissipation (TC=25℃) Symbol VDS VGS ID IDM PD N-Channel 30 ±20 22 66 20 P-Channel -30 ±20 -20 -60 20 Unit V V A A W Avalanche Current IAS 27 -25 A Avalanche Energy (L=0.1mH) EAS 36 31 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Case (Note 2) RθJC 6.2...
PE8322CG page 2 preview PE8322CG page 3 preview