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PE8325DM - N-Channel Enhancement Mode Power MOSFET

General Description

The PE8325DM uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 30V, ID = 14A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 17mΩ @ VGS=4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PE8325DM
Manufacturer ChipSourceTek
File Size 0.96 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8325DM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE8325DM N-Channel Enhancement Mode Power MOSFET Description The PE8325DM uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 30V, ID = 14A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 17mΩ @ VGS=4.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch k ● Power management Marking and pin assignment rceTe PDFN3.3x3.