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PE8324CKT - N and P Channel Enhancement Mode Power MOSFET

General Description

The PE8324CKT uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • N-Channel Schematic diagram.
  • VDS = 30V, ID = 18A RDS(ON) < 14mΩ @ VGS=10V RDS(ON) < 23mΩ @ VGS=4.5V.
  • P-Channel.
  • VDS = -30V, ID = -14A k RDS(ON) < 29mΩ @ VGS=-10V RDS(ON) < 40mΩ @ VGS=-4.5V e.
  • High Power and current handing capability.
  • Lead free product is acquired T.
  • Surface Mount Package PE8324CKT.

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Datasheet Details

Part number PE8324CKT
Manufacturer ChipSourceTek
File Size 598.83 KB
Description N and P Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8324CKT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE8324CKT N and P Channel Enhancement Mode Power MOSFET PE8324CKT Description The PE8324CKT uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE8324CKT General Features ● N-Channel Schematic diagram ● VDS = 30V, ID = 18A RDS(ON) < 14mΩ @ VGS=10V RDS(ON) < 23mΩ @ VGS=4.5V ● P-Channel ● VDS = -30V, ID = -14A k RDS(ON) < 29mΩ @ VGS=-10V RDS(ON) < 40mΩ @ VGS=-4.