CDBS001A Datasheet | Comchip Technology

Features Designed for mounting on small surface Extremely thin package Low stored charge Majority carrier conduction 0805(2012) 0.087(2.20) 0.079(2.00) 0.016(0.40) Typ Mechanical data Case: 0805(2012) Standard package, molded plastic Terminals: Solder plated, solderable per MIL-STD-750, method 2026 Polarity: Indicated by cathode band Mounting position: Any Weight: 0.0048 gram (approximately) 0.008(R0.2) Typ. 0.055(1.40) 0.047(1.20) 0.043 (1.10) 0.035(0.90) Dimensions in inches and (millimeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Repetitive peak reverse voltage Average forward current Forward current , surge peak 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit V RRM, V R IO I FSM CT PD T STG Tj -40 -40 1000 6 300 +125 +125 30 100 V m A m A p F m W C C Capacitance between terminals F=1MH Z and 10 V DC reverse voltage Power Dissipation Storage temperature Junction temperature Electrical Characteristics ( at TA = 25 C unless otherwise noted ) Parameter Forward voltage 1 Forward voltage 2 Forward voltage 3 Forward voltage 4 Forward voltage 5 Reverse current Conditions IF = 0.1 m A DC IF = 1 m A D C IF = 10 m A DC IF = 30 m A DC IF = 100 m A DC V R = 25 V Symbol Min Typ Max Unit VF VF VF VF VF IR 0.24 0.32 0.40 0.50 1.00 2 V V V V V u A RDS0208017-C Page 1 SMD Schottky Barrier Diode CHIP .chip..tw RATING AND CHARACTERISTIC CURVES (CDBS001A) Fig. 1 - Forward characteristics 1000 1m Fig. 2 - Reverse characteristics Reverse current ( A ) Forward current (m A ) 100u 125 C 10u 75...