CDBS0130 Datasheet | Comchip Technology

Features Designed for mounting on small surface Extremely thin package Low stored charge Majority carrier conduction 0805(2012) 0.087(2.20) 0.079(2.00) 0.016(0.40) Typ Mechanical data Case: 0805(2012)Standard package, molded plastic Terminals: Solder plated, solderable per MIL-STD-750, method 2026 Polarity: Indicated by cathode band. Mounting position: Any. 0.008(R0.20) Typ. 0.055(1.40) 0.047(1.20) 0.043 (1.10) 0.035(0.90) Dimensions in inches and (millimeter) Weight: 0.0048 gram. ( approximately) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current , surge peak Power Dissipation Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit V RRM VR Io I FSM PD T STG Tj -40 -40 1000 250 +125 +125 35 30 100 V V m A m A m W C C Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Parameter Forward voltage Reverse current Capacitance between terminals V R = 30 V f = 1MHz, and 10 VDC reverse voltage Conditions I F = 100 m A DC Symbol Min Typ Max Unit VF IR CT 10 0.44 30 V u A p F RDS0208007-C Page 1 SMD Schottky Barrier Diode CHIP .chip..tw RATING AND CHARACTERISTIC CURVES (CDBS0130) Fig. 1 - Forward characteristics 1000 1m Fig. 2 - Reverse characteristics Reverse current ( A ) Forward current (m A ) 125 C 100u 75...