CDBS00340 Datasheet | Comchip Technology

Features Designed for mounting on small surface Extremely thin package Low stored charge Majority carrier conduction 0805(2012) 0.087(2.20) 0.079(2.00) 0.016(0.40) Typ Mechanical data Case: 0805(2012) Standard package, molded plastic. Terminals: Solder plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. Mounting position: Any. 0.008(R0.20) Typ. 0.055(1.40) 0.047(1.20) 0.043 (1.10) 0.035(0.90) Dimensions in inches and (millimeter) Weight: 0.0048 gram. (approximately) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current , surge peak Power Dissipation Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit V RRM VR IO I FSM PD T STG Tj -40 -40 500 200 +125 +125 45 40 30 V V m A m A m W C C Electrical Characteristics ( at T A = 25 C Parameter Forward voltage Reverse current Reverse current I F = 1 m A DC V R = 40 V V R = 30 V unless otherwise noted ) Symbol Min Typ Max Unit VF IR IR CT 2 0.37 1 0.5 V u A u A p F Conditions Capacitance between terminals f = 1MHz, and 1 VDC reverse voltage RDS0208005-C Page 1 SMD Schottky Barrier Diode CHIP .chip..tw RATING AND CHARACTERISTIC CURVES (CDBS00340) Fig. 1 - Forward characteristics 10m 100u Fig. 1 - Forward characteristics 125 C Reverse current (A ) Forward current ( A ) 10u 1m 75...