Comchip Technology MMBT2907
PNP Transistor
| Part No. | MMBT2907 |
|---|---|
| Datasheet | MMBT2907 Download |
| Manufacturer |  Comchip Technology |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222A) Ideal for Medium Power Amplification and Switching TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33) 1 2 max. .004 (0.1) Pin Configuration 1 = Base 2 = Emitter 3 = CollectorMECHANICAL DATA
Case: SOT-23 Plastic Package Weight: approx. 0.008g Top View COLLECTOR 3 1 BASE .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) 2 EMITTER .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters)MAXIMUM RATINGS
& Thermal Characteristics Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol VCEO VCBO VEBO IC Symbol PD 2907 –40 –60 –5.0 –600 Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 2907A –60 Ratings at 25°C ambient temperature unless otherwise specified.
