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VDS 1700 V
C2M0080170P
ID @ 25˚C
40 A
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
RDS(on) 80 mΩ
N-Channel Enhancement Mode
Features
Package
• Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low On-resistance • High speed switching with low capacitances • Easy to parallel and simple to drive • Halogen Free, RoHS compliant
TAB Drain
Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Applications • 1500V Solar Inverters • Switch Mode Power Supplies • High voltage DC/DC Converters • Capacitor discharge
1 234 D SSG
Drain (P
C2M0080170P Datasheet
