C2M0080170P
C2M0080170P is Silicon Carbide Power MOSFET manufactured by Cree.
VDS 1700 V
ID @ 25˚C
40 A
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
RDS(on) 80 mΩ
N-Channel Enhancement Mode
Features
Package
- Optimized package with separate driver source pin
- 8mm of creepage distance between drain and source
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- Easy to parallel and simple to drive
- Halogen Free, Ro HS pliant
TAB Drain
Benefits
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency Applications
- 1500V Solar Inverters
- Switch Mode Power Supplies
- High voltage DC/DC Converters
- Capacitor discharge
1 234 D SSG
Drain (Pin 1, TAB)
Gate (Pin 4)
Driver Source (Pin...
