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C2M0080170P - Silicon Carbide Power MOSFET

Key Features

  • Package.
  • Optimized package with separate driver source pin.
  • 8mm of creepage distance between drain and source.
  • High blocking voltage with low On-resistance.
  • High speed switching with low capacitances.
  • Easy to parallel and simple to drive.
  • Halogen Free, RoHS compliant TAB Drain Benefits.
  • Reduce switching losses and minimize gate ringing.
  • Higher system efficiency.
  • Reduced cooling requirements.
  • I.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDS 1700 V C2M0080170P ID @ 25˚C 40 A Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 80 mΩ N-Channel Enhancement Mode Features Package • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low On-resistance • High speed switching with low capacitances • Easy to parallel and simple to drive • Halogen Free, RoHS compliant TAB Drain Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Applications • 1500V Solar Inverters • Switch Mode Power Supplies • High voltage DC/DC Converters • Capacitor discharge 1 234 D SSG Drain (P