Overview: CGHV35400F
400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440210. PN: Package TCyGpHeV: 43450420105F Typical Performance Over 2.9-3.5 GHz (TC = 85˚C) of Demonstration Amplifier Parameter 2.9 GHz 3.2 GHz 3.5 GHz Output Power 375 400 360 Gain 9.8 10 9.6 Drain Efficiency 66 59 57 Note: Measured in the CGHV35400F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, PIN = 46 dBm.
