Datasheet Summary
400 W, 2900
- 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9
- 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440210.
PN: Package
TCyGpHeV: 43450420105F
Typical Performance Over 2.9-3.5 GHz (TC = 85˚C) of Demonstration Amplifier
Parameter
2.9 GHz
3.2 GHz
3.5 GHz
Output Power
375 400 360
Gain
9.8 10 9.6
Drain Efficiency
66 59 57
Note: Measured in the CGHV35400F-AMP...