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CGHV35400F - GaN HEMT

General Description

RES, 511, OHM, +/- 1%, 1/16W, 0603 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 CAP, 6.8pF, +/-0.25%, 250V, 0603 CAP, 10.0pF, +/-1%, 250V, 0805 CAP, 10.0pF, +/-5%, 250V, 0603 CAP, 470pF, 5%, 100V, 0603, X CAP, 33000 pF, 0805, 100V, X7R CAP, 10uF 16V TANTALUM CAP, 1.0uF, 100V, 10%, X7R, 1210 CAP, 33uF, 20%, G

Key Features

  • 2.9 - 3.5 GHz Operation.
  • 400 W Typical Output Power.
  • 10.5 dB Power Gain.
  • 60% Typical Drain Efficiency.
  • 50 Ohm Internally Matched.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV35400F 400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440210. PN: Package TCyGpHeV: 43450420105F Typical Performance Over 2.9-3.5 GHz (TC = 85˚C) of Demonstration Amplifier Parameter 2.9 GHz 3.2 GHz 3.5 GHz Output Power 375 400 360 Gain 9.8 10 9.6 Drain Efficiency 66 59 57 Note: Measured in the CGHV35400F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, PIN = 46 dBm.