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CY15B104Q Datasheet 4-mbit (512 K X 8) Serial (spi) F-ram

Manufacturer: Cypress (now Infineon)

Overview: CY15B104Q 4-Mbit (512 K × 8) Serial (SPI) F-RAM 4-Mbit (512 K × 8) Serial (SPI).

General Description

The CY15B104Q is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process.

A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM.

It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

Key Features

  • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8.
  • High-endurance 100 trillion (1014) read/writes.
  • 151-year data retention (See the Data Retention and Endurance table).
  • NoDelay™ writes.
  • Advanced high-reliability ferroelectric process.
  • Very fast serial peripheral interface (SPI).
  • Up to 40-MHz frequency.
  • Direct hardware replacement for serial flash and EEPROM.
  • Supports SPI mode 0 (0, 0) and mode 3 (1, 1).
  • Sophistic.

CY15B104Q Distributor