CY15B128Q
Overview
- 128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process
- Very fast serial peripheral interface (SPI) ❐ Up to 40-MHz frequency ❐ Direct hardware replacement for serial flash and EEPROM ❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
- Sophisticated write-protection scheme ❐ Hardware protection using the Write Protect (WP) pin ❐ Software protection using Write Disable instruction ❐ Software block protection for 1/4, 1/2, or entire array
- Device ID ❐ Manufacturer ID and Product ID
- Low power consumption ❐ 2.5-mA active current at 40 MHz ❐ 150-A standby current ❐ 8-A sleep mode current
- Low-voltage operation
