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CY62148V - 512K x 8 MoBL Static RAM

General Description

The CY62148V is a high-performance CMOS static RAM organized as 524,288 words by 8 bits.

Key Features

  • Low voltage range:.
  • 2.7V.
  • 3.6V.
  • Ultra low active power.
  • Low standby power.
  • TTL-compatible inputs and outputs.
  • Automatic power-down when deselected.
  • CMOS for optimum speed/power The device can be put into standby mode when deselected (CE HIGH). Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location speci.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MoBL CY62148V MoBL™ 512K x 8 MoBL Static RAM Features • Low voltage range: — 2.7V–3.6V • Ultra low active power • Low standby power • TTL-compatible inputs and outputs • Automatic power-down when deselected • CMOS for optimum speed/power The device can be put into standby mode when deselected (CE HIGH). Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins.