Datasheet Summary
CY62157DV20 MoBL2
Features
- Very high speed: 55 ns
- Wide voltage range: 1.65V to 2.2V
- Pin patible with CY62157CV18
- Ultra low active power
- Typical active current: 1 mA @ f = 1 MHz
- Typical active current: 10 mA @ f = fmax
- Ultra low standby power
- Easy memory expansion with CE1, CE2 and OE Features
- Automatic power-down when deselected
- CMOS for optimum speed/power
- Packages offered in a 48-ball FBGA
Functional Description[1]
The CY62157DV20 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL) in portable...