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CY62157DV20 MoBL2
Features
• Very high speed: 55 ns • Wide voltage range: 1.65V to 2.2V • Pin compatible with CY62157CV18 • Ultra low active power
— Typical active current: 1 mA @ f = 1 MHz — Typical active current: 10 mA @ f = fmax • Ultra low standby power • Easy memory expansion with CE1, CE2 and OE features • Automatic power-down when deselected • CMOS for optimum speed/power • Packages offered in a 48-ball FBGA
Functional Description[1]
The CY62157DV20 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones.
CY62157DV20 Datasheet
