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CY62157DV20 - 8M (512K x 16) Static RAM

General Description

The CY62157DV20 is a high-performance CMOS static RAM organized as 512K words by 16 bits.

Key Features

  • Very high speed: 55 ns.
  • Wide voltage range: 1.65V to 2.2V.
  • Pin compatible with CY62157CV18.
  • Ultra low active power.
  • Typical active current: 1 mA @ f = 1 MHz.
  • Typical active current: 10 mA @ f = fmax.
  • Ultra low standby power.
  • Easy memory expansion with CE1, CE2 and OE features.
  • Automatic power-down when deselected.
  • CMOS for optimum speed/power.
  • Packages offered in a 48-ball FBGA Functional Descript.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
CY62157DV18 8M (512K x 16) Static RAM
CY62157DV30 8-Mbit (512K x 16) MoBL Static RAM
CY62157CV25 512K x 16 Static RAM
CY62157CV30 512K x 16 Static RAM
CY62157CV33 512K x 16 Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY62157DV20 MoBL2 Features • Very high speed: 55 ns • Wide voltage range: 1.65V to 2.2V • Pin compatible with CY62157CV18 • Ultra low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 10 mA @ f = fmax • Ultra low standby power • Easy memory expansion with CE1, CE2 and OE features • Automatic power-down when deselected • CMOS for optimum speed/power • Packages offered in a 48-ball FBGA Functional Description[1] The CY62157DV20 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones.