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CY62157E - 8-Mbit (512 K x 16) Static RAM

Datasheet Summary

Description

of read and write modes.

The CY62157E is a high performance CMOS static RAM organized as 512K words by 16 bits.

Features

  • Very high speed: 45 ns.
  • Industrial:.
  • 40 °C to +85 °C.
  • Automotive-E:.
  • 40 °C to +125 °C Wide voltage range: 4.5 V.
  • 5.5 V Ultra low standby power.
  • Typical standby current: 2 A.
  • Maximum standby current: 8 A (Industrial) Ultra low active power.
  • Typical active current: 1.8 mA at f = 1 MHz Ultra low standby power Easy memory expansion with CE1, CE2 and OE features Automatic power down when deselected CMOS for optimum speed and power Available in.

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Datasheet Details

Part number CY62157E
Manufacturer Cypress Semiconductor
File Size 450.68 KB
Description 8-Mbit (512 K x 16) Static RAM
Datasheet download datasheet CY62157E Datasheet
Additional preview pages of the CY62157E datasheet.

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Full PDF Text Transcription

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CY62157E MoBL® 8-Mbit (512 K × 16) Static RAM 8-Mbit (512 K × 16) Static RAM Features ■ Very high speed: 45 ns ❐ Industrial: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C Wide voltage range: 4.5 V–5.5 V Ultra low standby power ❐ Typical standby current: 2 A ❐ Maximum standby current: 8 A (Industrial) Ultra low active power ❐ Typical active current: 1.8 mA at f = 1 MHz Ultra low standby power Easy memory expansion with CE1, CE2 and OE features Automatic power down when deselected CMOS for optimum speed and power Available in Pb-free 44-pin TSOP II and 48-ball VFBGA package ■ ■ applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.
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