CY7C1021BN
Overview
- Temperature ranges ❐ Commercial: 0 °C to 70 °C ❐ Industrial: -40 °C to 85 °C ❐ Automotive-A: -40 °C to 85 °C ❐ Automotive-E: -40 °C to 125 °C
- High speed ❐ tAA = 15 ns (Automotive)
- Complementary metal oxide semiconductor (CMOS) for optimum speed/power
- Low active power ❐ 825 mW (maximum)
- Automatic power down when deselected
- Independent control of upper and lower bits
- Available in Pb-free and non Pb-free 44-pin TSOP II and 44-pin 400-mil-wide SOJ Functional Description The CY7C1021BN is a high performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from the input/output (I/O) pins (I/O1 through I
