• Part: CY7C1248KV18
  • Description: 36-Mbit DDR II+ SRAM Two-Word Burst Architecture
  • Manufacturer: Cypress
  • Size: 1.17 MB
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Cypress
CY7C1248KV18
CY7C1248KV18 is 36-Mbit DDR II+ SRAM Two-Word Burst Architecture manufactured by Cypress.
CY7C1248KV18/CY7C1250KV18 36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) Features - 36-Mbit density (2M × 18, 1M × 36) - 450 MHz clock for high bandwidth - Two-word burst for reducing address bus frequency - Double data rate (DDR) interfaces (data transferred at 900 MHz) at 450 MHz - Available in 2.0 clock cycle latency - Two input clocks (K and K) for precise DDR timing - SRAM uses rising edges only - Echo clocks (CQ and CQ) simplify data capture in high speed systems - Data valid pin (QVLD) to indicate valid data on the output - Synchronous internally self-timed writes - DDR II+ operates with 2.0 cycle read latency when DOFF is asserted HIGH - Operates similar to DDR I device with 1 cycle read latency when DOFF is asserted LOW - Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to VDD[1] - Supports both 1.5 V and 1.8 V I/O supply - HSTL inputs and variable...