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CY7C1313AV18 - (CY7C131xAV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture

This page provides the datasheet information for the CY7C1313AV18, a member of the CY7C1311AV18 (CY7C131xAV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture family.

Datasheet Summary

Description

The CY7C1311AV18/CY7C1313AV18/CY7C1315AV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture.

QDR-II architecture consists of two separate ports to access the memory array.

Features

  • Separate Independent Read and Write Data Ports.
  • Supports concurrent transactions.
  • 250-MHz Clock for High Bandwidth.
  • 4-Word Burst for reducing address bus frequency.
  • Double Data Rate (DDR) interfaces on both Read and Write Ports (data transferred at 500 MHz) at 250 MHz.
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Two output clocks (C and C) accounts for clock skew and flight time mismatchi.

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Datasheet preview – CY7C1313AV18

Datasheet Details

Part number CY7C1313AV18
Manufacturer Cypress Semiconductor
File Size 356.67 KB
Description (CY7C131xAV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
Datasheet download datasheet CY7C1313AV18 Datasheet
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Full PDF Text Transcription

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PRELIMINARY CY7C1311AV18 CY7C1313AV18 CY7C1315AV18 18-Mb QDR™-II SRAM 4-Word Burst Architecture Features • Separate Independent Read and Write Data Ports — Supports concurrent transactions • 250-MHz Clock for High Bandwidth • 4-Word Burst for reducing address bus frequency • Double Data Rate (DDR) interfaces on both Read and Write Ports (data transferred at 500 MHz) at 250 MHz • Two input clocks (K and K) for precise DDR timing — SRAM uses rising edges only • Two output clocks (C and C) accounts for clock skew and flight time mismatching • Echo clocks (CQ and CQ) simplify data capture in high speed systems • Single multiplexed address input bus latches address inputs for both Read and Write ports • Separate Port Selects for depth expansion • Synchronous internally self-timed writes • Ava
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