CY7C1321KV18 Datasheet | Cypress

CY7C1319KV18/CY7C1321KV18 18-Mbit DDR II SRAM Four-Word Burst Architecture 18-Mbit DDR II SRAM Four-Word Burst Architecture Features - 18-Mbit density (1M × 18, 512K × 36) - 333-MHz clock for high bandwidth - Four-word burst for reducing address bus frequency - Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz - Two input clocks (K and K) for precise DDR timing - SRAM uses rising edges only - Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches - Echo clocks (CQ and CQ) simplify data capture in high speed systems - Synchronous internally self-timed writes - DDR II operates with 1.5 cycle read latency when DOFF is asserted HIGH - Operates similar to DDR I device with one cycle read latency when DOFF is asserted LOW - 1.8 V core power supply with HSTL inputs and outputs - Variable drive HSTL output buffers - Expanded HSTL output voltage (1.4 V- VDD) - Supports both 1.5 V and 1.8 V I/O supply - Available in 165-ball FBGA package (13 × 15 × 1.4 mm) - Offered in both Pb-free and non Pb-free packages - JTAG 1149.1 patible test access port - Phase locked loop (PLL) for accurate data placement Configurations CY7C1319KV18 - 1M × 18 CY7C1321KV18 - 512K × 36 Functional Description CY7C1319KV18 and CY7C1321KV18 are 1.8 V Synchronous Pipelined SRAMs equipped with DDR II architecture. The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a two-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. For CY7C1319KV18 and CY7C1321KV18, the burst counter takes in the least two significant bits of the external address and bursts four 18-bit words in the case of CY7C1319KV18, and four 36-bit words in the case of CY7C1321KV18, sequentially into or out...