• Part: CY7C1393KV18
  • Description: 18-Mbit DDR II SIO SRAM Two-Word Burst Architecture
  • Manufacturer: Cypress
  • Size: 587.97 KB
Download CY7C1393KV18 Datasheet PDF
Cypress
CY7C1393KV18
CY7C1393KV18 is 18-Mbit DDR II SIO SRAM Two-Word Burst Architecture manufactured by Cypress.
Features - 18-Mbit density (2M × 8, 1M × 18) - 333-MHz clock for high bandwidth - Two-word burst for reducing address bus frequency - Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz - Two input clocks (K and K) for precise DDR timing - SRAM uses rising edges only - Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches - Echo clocks (CQ and CQ) simplify data capture in high-speed systems - Synchronous internally self timed writes - DDR II operates with 1.5 cycle read latency when DOFF is asserted HIGH - Operates similar to DDR I device with one cycle read latency when DOFF is asserted LOW - 1.8 V core power supply with HSTL inputs and outputs - Variable drive HSTL output buffers - Expanded HSTL output voltage (1.4 V- VDD) - Supports both 1.5 V and 1.8 V I/O...