Datasheet4U Logo Datasheet4U.com

CY7C139 - 4K x 8/9 Dual-Port Static RAM

Download the CY7C139 datasheet PDF. This datasheet also covers the CY7C138 variant, as both devices belong to the same 4k x 8/9 dual-port static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The CY7C138 and CY7C139 are high-speed CMOS 4K x 8 and 4K x 9 dual-port static RAMs.

Key Features

  • True Dual-Ported memory cells that allow simultaneous reads of the same memory location.
  • 4K x 8 organization (CY7C138).
  • 4K x 9 organization (CY7C139).
  • 0.65-micron CMOS for optimum speed/power.
  • High-speed access: 15 ns.
  • Low operating power: ICC = 160 mA (max. ).
  • Fully asynchronous operation.
  • Automatic power-down.
  • TTL compatible.
  • Expandable data bus to 32/36 bits or more using Master/Slave chip select when us.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C138-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CY7C131AE 1K/2K x 8 Dual-Port Static RAM Cypress
CY7C131E 1K/2K x 8 Dual-Port Static RAM Cypress
CY7C136AE 1K/2K x 8 Dual-Port Static RAM Cypress
CY7C136E 1K/2K x 8 Dual-Port Static RAM Cypress
CY7C1370C 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture Cypress

Other Datasheets by Cypress (now Infineon)

Part Number Description
CY7C1392BV18 1.8V Synchronous Pipelined SRAM
CY7C1392KV18 18-Mbit DDR II SIO SRAM Two-Word Burst Architecture
CY7C1393BV18 1.8V Synchronous Pipelined SRAM
CY7C1393KV18 18-Mbit DDR II SIO SRAM Two-Word Burst Architecture
CY7C1394BV18 1.8V Synchronous Pipelined SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY7C138 CY7C1394K x 8/9 Dual-Port Static RAM with Sem, Int, Busy CY7C138 CY7C139 Features • True Dual-Ported memory cells that allow simultaneous reads of the same memory location • 4K x 8 organization (CY7C138) • 4K x 9 organization (CY7C139) • 0.65-micron CMOS for optimum speed/power • High-speed access: 15 ns • Low operating power: ICC = 160 mA (max.