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CY7C1420KV18 - 36-Mbit DDR II SRAM Two-Word Burst Architecture

Download the CY7C1420KV18 datasheet PDF. This datasheet also covers the CY7C1418KV18 variant, as both devices belong to the same 36-mbit ddr ii sram two-word burst architecture family and are provided as variant models within a single manufacturer datasheet.

General Description

The CY7C1418KV18, and CY7C1420KV18 are 1.8 V synchronous pipelined SRAM equipped with DDR II architecture.

The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter.

Key Features

  • 36-Mbit density (2M × 18, 1M × 36).
  • 333 MHz clock for high bandwidth.
  • Two-word burst for reducing address bus frequency.
  • Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz.
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches.
  • Echo clocks (CQ and CQ) simplify data capture in high speed systems.
  • Synchronous in.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C1418KV18-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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CY7C1011G 2-Mbit (128K words x 16 bit) Static RAM Cypress
CY7C1041G 4-Mbit (256K words x 16 bit) Static RAM Cypress

Other Datasheets by Cypress (now Infineon)

Part Number Description
CY7C1420AV18 (CY7C14xxAV18) 36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1420BV18 36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1420JV18 36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C142 2K x 8 Dual-Port Static RAM
CY7C1421AV18 1.8V Synchronous Pipelined SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY7C1418KV18/CY7C1420KV18 36-Mbit DDR II SRAM Two-Word Burst Architecture 36-Mbit DDR II SRAM Two-Word Burst Architecture Features ■ 36-Mbit density (2M × 18, 1M × 36) ■ 333 MHz clock for high bandwidth ■ Two-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches ■ Echo clocks (CQ and CQ) simplify data capture in high speed systems ■ Synchronous internally self-timed writes ■ DDR II operates with 1.5 cycle read latency when DOFF is asserted HIGH ■ Operates similar to DDR-I device with 1 cycle read latency when DOFF is asserted LOW ■ 1.