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CY7C1614KV18 - 144-Mbit QDR II SRAM Two-Word Burst Architecture

Download the CY7C1614KV18 datasheet PDF. This datasheet also covers the CY7C1625KV18 variant, as both devices belong to the same 144-mbit qdr ii sram two-word burst architecture family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Separate independent read and write data ports.
  • Supports concurrent transactions.
  • 360-MHz clock for high bandwidth.
  • Two-word burst on all accesses.
  • Double data rate (DDR) interfaces on both read and write ports (data transferred at 720 MHz) at 360 MHz.
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches.
  • Echo clocks (CQ and CQ) sim.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C1625KV18-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY7C1625KV18 CY7C1612KV18 CY7C1614KV18 144-Mbit QDR® II SRAM Two-Word Burst Architecture 144-Mbit QDR® II SRAM Two-Word Burst Architecture Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 360-MHz clock for high bandwidth ■ Two-word burst on all accesses ■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 720 MHz) at 360 MHz ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches ■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems ■ Single multiplexed address input bus latches address inputs for both read and write ports ■ Separate port selects for depth expansion ■ Synchron