CY7C1620KV18 - 144-Mbit DDR II SRAM Two-Word Burst Architecture

Product Overview

Cypress Semiconductor

Part number	CY7C1620KV18
Manufacturer	Cypress Semiconductor
File Size	569.14 KB
Description	144-Mbit DDR II SRAM Two-Word Burst Architecture
Datasheet	CY7C1620KV18 Datasheet
Note	This datasheet PDF includes multiple part numbers: CY7C1620KV18, CY7C1618KV18. Please refer to the document for exact specifications by model.
Additional preview pages of the CY7C1620KV18 datasheet.

144-Mbit density (8M × 18, 4M × 36).
333 MHz clock for high bandwidth.
Two-word burst for reducing address bus frequency.
Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz.
Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges only.
Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches.
Echo clocks (CQ and CQ) simplify data capture in high-speed systems.
Synchronous i.

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Published: Mar 14, 2017 |