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CY7C186 - 8Kx8 Static RAM

General Description

The CY7C186 is a high-performance CMOS static RAM organized as 8192 words by 8 bits.

Key Features

  • High speed.
  • 20 ns.
  • Low active power.
  • 605 mW.
  • Low standby power.
  • 110 mW.
  • CMOS for optimum speed/power.
  • Easy memory expansion with CE1, CE2, and OE features.
  • TTL-compatible inputs and outputs.
  • Automatic power-down when deselected provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers. The device has an automatic power-down feat.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
CY7C185 8K x 8 Static RAM
CY7C185A 8K x 8 Static RAM
CY7C185D 64K (8K x 8) Static RAM
CY7C187 64K x 1 Static RAM
CY7C188 32K x 9 Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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86 CY7C186 8Kx8 Static RAM Features • High speed — 20 ns • Low active power — 605 mW • Low standby power — 110 mW • CMOS for optimum speed/power • Easy memory expansion with CE1, CE2, and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers. The device has an automatic power-down feature (CE1), reducing the power consumption by over 80% when deselected. The CY7C186 is in a 600-mil-wide PDIP package and a 32-pin TSOP (std. pinout). An active LOW write enable signal (WE) controls the writing/reading operation of the memory.