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CY7C2270KV18 - 36-Mbit DDR II+ SRAM Two-Word Burst Architecture

This page provides the datasheet information for the CY7C2270KV18, a member of the CY7C2268KV18 36-Mbit DDR II+ SRAM Two-Word Burst Architecture family.

Datasheet Summary

Features

  • 36-Mbit density (2 M × 18, 1 M × 36).
  • 550 MHz clock for high bandwidth.
  • Two-word burst for reducing address bus frequency.
  • Double data rate (DDR) interfaces (data transferred at 1100 MHz) at 550 MHz.
  • Available in 2.5 clock cycle latency.
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Echo clocks (CQ and CQ) simplify data capture in high speed systems.
  • Data valid pin (QVLD) to indicate valid data on the output.
  • On.

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Datasheet preview – CY7C2270KV18

Datasheet Details

Part number CY7C2270KV18
Manufacturer Cypress Semiconductor
File Size 625.92 KB
Description 36-Mbit DDR II+ SRAM Two-Word Burst Architecture
Datasheet download datasheet CY7C2270KV18 Datasheet
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CY7C2268KV18/CY7C2270KV18 36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features ■ 36-Mbit density (2 M × 18, 1 M × 36) ■ 550 MHz clock for high bandwidth ■ Two-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces (data transferred at 1100 MHz) at 550 MHz ■ Available in 2.
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