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CY7C261

Manufacturer: Cypress (now Infineon)

CY7C261 datasheet by Cypress (now Infineon).

This datasheet includes multiple variants, all published together in a single manufacturer document.

CY7C261 datasheet preview

CY7C261 Datasheet Details

Part number CY7C261
Datasheet CY7C261 CY7 Datasheet (PDF)
File Size 248.10 KB
Manufacturer Cypress (now Infineon)
Description 8K x 8 Power-Switched and Reprogrammable PROM
CY7C261 page 2 CY7C261 page 3

CY7C261 Overview

The CY7C261, CY7C263, and CY7C264 are high-performance 8192-word by 8-bit CMOS PROMs. Cypress Semiconductor Corporation Document.

CY7C261 Key Features

  • CMOS for optimum speed/power
  • Windowed for reprogrammability
  • High speed
  • 20 ns (mercial)
  • 25 ns (Military)
  • Low power
  • 660 mW (mercial)
  • 770 mW (Military)
  • Super low standby power (7C261)
  • Less than 220 mW when deselected
Cypress (now Infineon) logo - Manufacturer

More Datasheets from Cypress (now Infineon)

View all Cypress (now Infineon) datasheets

Part Number Description
CY7C263 8K x 8 Power-Switched and Reprogrammable PROM
CY7C264 8K x 8 Power-Switched and Reprogrammable PROM
CY7C2642KV18 144-Mbit QDR II+ SRAM Two-Word Burst Architecture
CY7C2644KV18 144-Mbit QDR II+ SRAM Two-Word Burst Architecture
CY7C265 8K x 8 Registered PROM
CY7C266 8Kx8 Power-Switched and Reprogrammable PROM
CY7C2663KV18 144-Mbit QDR II+ SRAM Four-Word Burst Architecture
CY7C2665KV18 144-Mbit QDR II+ SRAM Four-Word Burst Architecture
CY7C2670KV18 144-Mbit DDR II+ SRAM Two-Word Burst Architecture
CY7C2163KV18 18-Mbit QDR II+ SRAM Four-Word Burst Architecture

CY7C261 Distributor

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