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CY7C2665KV18 - 144-Mbit QDR II+ SRAM Four-Word Burst Architecture

This page provides the datasheet information for the CY7C2665KV18, a member of the CY7C2663KV18 144-Mbit QDR II+ SRAM Four-Word Burst Architecture family.

Datasheet Summary

Features

  • Separate independent read and write data ports.
  • Supports concurrent transactions.
  • 550-MHz clock for high bandwidth.
  • Four-word burst for reducing address bus frequency.
  • Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz.
  • Available in 2.5-clock cycle latency.
  • Two input clocks (K and K) for precise DDR timing.
  • Static random access memory (SRAM) uses rising edges only.
  • Echo clocks (CQ and CQ) simplif.

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Datasheet preview – CY7C2665KV18

Datasheet Details

Part number CY7C2665KV18
Manufacturer Cypress Semiconductor
File Size 1.20 MB
Description 144-Mbit QDR II+ SRAM Four-Word Burst Architecture
Datasheet download datasheet CY7C2665KV18 Datasheet
Additional preview pages of the CY7C2665KV18 datasheet.

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Full PDF Text Transcription

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CY7C2663KV18/CY7C2665KV18 144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 550-MHz clock for high bandwidth ■ Four-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz ■ Available in 2.
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