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CY7C4141KV13 - 144-Mbit QDR-IV HP SRAM

Download the CY7C4141KV13 datasheet PDF. This datasheet also covers the CY7C4121KV13 variant, as both devices belong to the same 144-mbit qdr-iv hp sram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 144-Mbit density (8M ×18, 4M ×36).
  • Total Random Transaction Rate [1] of 1334 MT/s.
  • Maximum operating frequency of 667 MHz.
  • Read latency of 5.0 clock cycles and write latency of 3.0 clock cycles.
  • Two-word burst on all accesses.
  • Dual independent bidirectional data ports.
  • Double data rate (DDR) data ports.
  • Supports concurrent read/write transactions on both ports.
  • Single address port used to control both data ports.
  • DDR address signaling.
  • Sing.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C4121KV13-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY7C4121KV13/CY7C4141KV13 144-Mbit QDR™-IV HP SRAM 144-Mbit QDR™-IV HP SRAM Features ■ 144-Mbit density (8M ×18, 4M ×36) ■ Total Random Transaction Rate [1] of 1334 MT/s ■ Maximum operating frequency of 667 MHz ■ Read latency of 5.0 clock cycles and write latency of 3.0 clock cycles ■ Two-word burst on all accesses ■ Dual independent bidirectional data ports ❐ Double data rate (DDR) data ports ❐ Supports concurrent read/write transactions on both ports ■ Single address port used to control both data ports ❐ DDR address signaling ■ Single data rate (SDR) control signaling ■ High-speed transceiver logic (HSTL) and stub series terminated logic (SSTL) compatible signaling (JESD8-16A compliant) ❐ I/O VDDQ = 1.2 V ± 50 mV or 1.