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CY7C4285V - 32K/64K x 18 Low Voltage Deep Sync FIFOs

Download the CY7C4285V datasheet PDF. This datasheet also covers the CY7C4275V variant, as both devices belong to the same 32k/64k x 18 low voltage deep sync fifos family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 3.3 V operation for low power consumption and easy integration into low voltage systems.
  • High speed, low power, first-in first-out (FIFO) memories.
  • 8K × 18 (CY7C4255V).
  • 32K × 18 (CY7C4275V).
  • 64K × 18 (CY7C4285V).
  • 0.35 micron CMOS for optimum speed and power.
  • High speed 100 MHz operation (10 ns read/write cycle times).
  • Low power.
  • ICC = 30 mA.
  • ISB = 4 mA.
  • Fully asynchronous and simultaneous read and write operation.
  • Empty, Full, Half Ful.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C4275V_CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY7C4255V CY7C4275V CY7C4285V 8K/32K/64K × 18 Low Voltage Deep Sync FIFOs 8K/32K/64K × 18 Low Voltage Deep Sync FIFOs Features ■ 3.3 V operation for low power consumption and easy integration into low voltage systems ■ High speed, low power, first-in first-out (FIFO) memories ■ 8K × 18 (CY7C4255V) ■ 32K × 18 (CY7C4275V) ■ 64K × 18 (CY7C4285V) ■ 0.